MRF8S21120HSR3【PDF 1/14 页】FET RF N-CH 2.1GHZ 28V NI780HS

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MRF8S21120HR3 MRF8S21120HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA and LTE base station applications with frequencies

from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

cellular base station modulation formats.

Typical Single--Carrier W--CDMA Performance: VDD

=28Volts,IDQ

850 mA, Pout

= 28 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on

CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz

17.4

34.6

6.4

--37.5

2140 MHz

17.5

34.1

6.5

--38.0

2170 MHz

17.6

34.0

6.4

--37.6

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW

(1)

Output Power (3 dB Input Overdrive from Rated Pout)

Typical Pout

@ 1 dB Compression Point

107 Watts CW

(1)

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(2,3)

225

°C

CW Operation @ TC

=25°C

Derate above 25°C

0.44

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(3,4)

Unit

Thermal Resistance, Junction to Case

Case Temperature 74°C, 28 W CW, 28 Vdc, IDQ

= 850 mA, 2140 MHz

(1),28Vdc,IDQ

= 850 mA, 2140 MHz

Case Temperature 80°C, 120 W CW

RθJC

0.53

0.51

°C/W

1. Exceeds recommended operating conditions. See

CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

4. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF8S21120H

Rev. 0, 5/2010

Freescale Semiconductor

Technical Data

2110--2170 MHz, 28 W AVG., 28 V

W--CDMA, LTE

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF8S21120HR3

MRF8S21120HSR3

CASE 465A--06, STYLE 1

NI--780S

MRF8S21120HSR3

CASE 465--06, STYLE 1

NI--780

MRF8S21120HR3

Freescale Semiconductor, Inc., 2010.

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